Mechanism for bipolar resistive switching in transition-metal oxides
نویسندگان
چکیده
منابع مشابه
Resistive Switchings in Transition Metal Oxides
Promising candidates for the next-generation memory devices have emerged one after another for the last decade. Ferroelectric random access memories (FeRAM), magnetoresistive random access memories (MRAM), phase change memories (PCM) are indeed at the dawn of the international development races. Along with those three fascinating memories, we focus here on probably the most seminal candidate of...
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Electrically driven resistance change in metal oxides opens up an interdisciplinary research field for next-generation non-volatile memory. Resistive switching exhibits an electrical polarity dependent "bipolar-switching" and a polarity independent "unipolar-switching", however tailoring the electrical polarity has been a challenging issue. Here we demonstrate a scaling effect on the emergence ...
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A stochastic model of the resistive switching mechanism in bipolar metal-oxide-based resistive random access memory RRAM is presented. The distribution of electron occupation probabilities obtained is in good agreement with previous work. In particular, it is shown that a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation p...
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We show that the SET operation of a unipolar memristor could be explained by thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a steep temperature gradient. This mechanism explains the observed resistance switching via conducting channel formation and dissolution reported for TiO2 and other metal-oxide-based unipolar resistance switches. Depending on the...
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Karsten Fleck, Camilla La Torre, Nabeel Aslam, Susanne Hoffmann-Eifert, Ulrich Böttger, and Stephan Menzel Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, 52074 Aachen, Germany Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany (Received 27 July 2016; revised manuscript received 14 October 2016; published 27 D...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2010
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.81.115101